Semiconductor photo-sensor and method for manufacturing the same

ABSTRACT

A semiconductor optical device is provided with a photo-electric conversion unit having plural photo-electric conversion elements and is entirely sealed by a sealing member. The photo-electric conversion elements are connected to external leads with electrical connectors. The distance D between a planar outer surface and a photoelectric conversion area satisfies the equation, D≧/2·l/tan θ, where θ is a critical angle of total reflection of the sealing member with respect to air and l is the maximum length of said photoelectric conversion area.

This application is a continuation of application Ser. No. 08/415,581,filed Apr 3, 1995, now abandoned, which is a continuation of applicationSer. No. 08/253,204, filed Jun. 2, 1994, now abandoned, which is acontinuation of application Ser. No. 07/965,569, filed Oct. 23, 1992,now abandoned, which is a continuation of application Ser. No.07/825,768, filed Jan. 21, 1992, now abandoned, which is a continuationof application Ser. No. 07/646,459, filed Jan. 25, 1991, now abandoned,which is a continuation of application Ser. No. 07/396,825, filed Aug.21, 1989, now abandoned, which is a continuation of application Ser. No.07/072,737, filed Jul. 13, 1987, now abandoned.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor photo-sensor having aphoto-electric conversion element for converting an incident light to anelectrical signal sealed by light transmitting resin, and a method formanufacturing the same.

2. Related Background Art

A prior art photo-electric converter for converting an incident lightbeam to an electrical signal is shown in FIG. 1.

A photo-electric conversion element 1 is fixed on a photo-electricconversion element support member 2, fine metal wires 3 are wire-bondedat predetermined areas on the photo-electric conversion element 1 andlead terminals 2', and light transmitting resin 4 is molded to form anouter shape. Then, external leads 2" of the lead terminals 2' are cut toa desired length and bent to complete the semiconductor photo-sensor.

The above prior art semiconductor photo-sensor has the followingproblems.

(1) When a photo-sensing area of the photo-electric conversion elementcomprises a plurality (n) of photo-sensing cells, if light 6 having auniform light flux on each of n photo-sensing cells of thephoto-electric conversion element 1 is applied, electrical signalsderived from the n photo-sensing cells should be of the same level, butthey are, in actuality, not of the same level. When light is applied toone of n photo-sensing cells and no light is applied to otherphoto-sensing cells, an electrical signal which is larger than a darkcurrent is produced by the photo-sensing cell to which the light is notapplied.

(2) If there is a defect on the surface 9 of the light transmittingresin 4, an electrical signal from a photo-sensing cell in the vicinityof an area 10 on the photo-electric conversion element 1 to which thelight passing through the defect reaches, is lowered.

Those problems are serious, particularly in a semiconductor photo-sensorfor focussing a camera (AF sensor) which has a number of finephoto-sensing cells because the smaller the area per photo-sensing areais, the higher sensitivity is required. Accordingly, it is generallyrecognized that packaging by the light transmitting resin isinapplicable to the AF sensor.

In another prior art semiconductor photo-sensor, an infrared rayblocking filter is mounted on a light transmission surface of the lighttransmitting resin. In such a semiconductor photo-sensor, in addition tothe above-mentioned problem that the electrical signals which exactlyrepresent the incident light are not produced, the followingmanufacturing problem arises.

(1) When the light transmitting resin is molded, mold releasing agentmay be deposited on the surface of the resin or a flow is formed duringtransfer of the mold. They are factors of impeding the lighttransmission and effect to the photo-characteristic of thephoto-electric conversion element. Washing and polishing process toremove them are additionally required, which is a cause to increase amanufacturing cost.

(2) When the optical filter is bonded, liquid bonding material is used.Accordingly, it is difficult to improve a vertical positional precision.In order to improve a horizontal positional precision, mechanical oroptical position detection is required. If it is done by a mechanicalunit, it is complex and needs expensive investiment.

(3) If an air bubble exists in the bonding material, it impedes thelight transmission and effects to the photo-characteristic of thephoto-electric conversion element. Accordingly, great care must paid inbonding the optical filter.

(4) As shown in FIG. 12, when the optical filter is a lens 29, thebonding surface of the light transmitting resin 4 is not planar.Accordingly, the light transmitting resin 4 may have an acute corner 30.In such a case, it is hard to release the mold and a crack may beproduced in the resin. This lowers the manufacturing yield.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide a semiconductorphoto-sensor having an improved characteristic which overcomes theproblems encountered in the prior art semiconductor photo-sensors.

It is another object of the present invention to provide a semiconductorphoto-sensor sealed by light transmitting resin in which electricalsignals derived from a plurality of photo-sensing cells of aphoto-electric conversion element are equal.

It is another object of the present invention to provide a semiconductorphoto-sensor sealed by light transmitting resin in which an electricalsignal from a photo-sensing cell is not attenuated even if there is adefect on a surface of the light transmitting resin.

It is a further object of the present invention to provide a method formanufacturing a semiconductor photo-sensor sealed by light transmittingresin and having a light transmitting member such as an optical filtermounted on a light transmission surface of the sealant, which allows agood optical characteristic between the sealant and the lighttransmitting member, and high manufacturing yield and low manufacturingcost.

In order to achieve the above objects, the semiconductor photo-sensor ofthe present invention has a thickness between a transparent area throughwhich light is directed to the photo-conversion element having aplurality of photo-sensing cells and a photo-sensing surface of thephoto-electric conversion element and a shape of the transparent areawhich are so designed that effects of a light reflected by aphoto-sensing cell of the photo-electric conversion element, furtherreflected by the transparent area and then directed to otherphoto-sensing cells, and a light reflected by a periphery of thephoto-sensing cells of the photo-electric conversion element, furtherreflected by the transparent area and then directed to the photo-sensingcells, are reduced.

In accordance with the present invention, the method for manufacturingthe semiconductor photo-sensor comprises the steps of:

mounting a light transmitting member at a predetermined position on amold;

holding a semiconductor photo-sensor element comprising a photo-electricconversion element, electrical connection means and lead terminalsexcluding external leads, in facing relation to the light transmittingmember;

injecting light transmitting resin into the mold to seal thesemiconductor sensor element and bonding the light transmitting memberby the sealant.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a sectional view of a prior art semiconductor photo-sensor,

FIG. 2 shows a sectional view of one embodiment of a semiconductorphoto-sensor of the present invention,

FIG. 3 shows a sectional view of another embodiment of the semiconductorphoto-sensor of the present invention,

FIG. 4 shows an optical system developed diagram of the semiconductorphoto-sensor of the present invention used as an AF sensor of a camera,

FIG. 5 illustrates a principle thereof, and

FIGS. 6 to 11 show sectional views of embodiments of a manufacturingmethod for the semiconductor photo-sensor of the present invention; and

FIG. 12 shows a semiconductor photo-sensor with a lens filter.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Referring to FIG. 1, causes for the problems encountered in the priorart photo-sensors, which the inventors studied, are explained.

When light 6 impinges at right angle to the light transmitting resin 4and the photo-electric conversion element 1 through an air layer 11, thelight is reflected and scattered by a surface 12 of the photo-electricconversion element 1. An intensity of the reflected and scattered lightis dependent on an angle depending on material and area of the surface12. Some of the reflected and scattered lights reach the air layer 11through the resin 4 and some are reflected at the interface of the airlayer 11 and the resin 4.

According to Snell's law, a total reflection occurs at a certain angleθ₁ which is determined by indices of refraction of the lighttransmitting resin 4 and the air layer 11. For example, when the indicesof refraction of the light transmitting resin 4 and air layer 11 are 1.5and 1, respectively, the angle θ₁ is approximately 40 degrees and thetotal reflection occurs when the incident angle is more than 40 degrees.An incident light intensity A at the photo-sensing cell 5 of thephoto-electric conversion element 1 is given by

    A= intensity of light 6!+ integration of all reflected lights of lights having an incident angle θ.sub.r (θ.sub.r ≧θ.sub.1)!+ integration of all reflected lights of lights having an incident angle θ.sub.r (θ.sub.r <θ.sub.1)!(1)

In the third term of the formula (1), when θ_(r) is smaller than θ₁, areflected light is of very low intensity and it may be neglected, butwhen θ_(r) is close to θ₁, the reflected light intensity is high.

For example, in the AF sensor, a light shielding A1 film and apassivation film are laminated on an area other than a photo-sensingarea. Since the A1 film has a certain surface roughness, an incidentlight is diffusion-reflected by the A1 film. In the AF sensor, theincident light is not always directed normally to the photo-sensing areabut directed at an angle. In such a case, the lights which are reflectedat an angle close to the total reflection angle increase.

The inventors made the following theoretical assumption. The intensityof the light to the photo-sensing cell 5 is a sum of the light intensityof the light 6 and light intensities of lights reflected by a vicinityof circumference and outside of a circle centered at the photo-sensingcell 5 on the photo-electric conversion element 1 and having a radiusl₁. The latter spurious reflected lights cause abnormality in theoptical characteristic.

The inventors further studied based on the above assumption and attainedan excellent result in a semiconductor photo-sensor constructed inaccordance with the requirement of the theoretical assumption.

FIG. 2 shows a sectional view of a first embodiment of the semiconductorphoto-sensor of the present invention. In FIG. 2, the like numerals tothose shown in FIG. 1 designate the like elements. The photo-electricconversion element 1 is fixed to the photo-electric element supportmember 2, fine metal wires 3 are bonded to predetermined areas of thephoto-conversion element 1 and the lead terminals 2', and the lighttransmitting resin 4 is molded by mold means such as transfer moldmethod to form an outer shape. The mold used has a larger distancebetween the light transmitting surface and the photo-electric conversionelement than that of the prior art photo-sensor. In FIG. 2, d₁represents a distance between the sealant surface and the photo-electricconversion element 1 of the prior art semiconductor photo-sensor, and d₁+d₂ represents a distance between the light transmitting surface of thesealant and the photo-electric conversion element 1 of the presentinvention. In the prior art photo-sensor, D=d₁ while in the presentinvention, D=d₁ +d₂ (d₂ >0). Then, the external leads 7 of the leadterminals 2' are cut to a desired length and bent to complete thesemiconductor photo-sensor.

The intensity of light applied to the photo-sensing element 5 of thephoto-electric conversion element 1 is given by the following formula,where θ is a total reflection angle by the Snell's law.

    A=(an intensity of the light 6)+(sum of intensities of lights in the vicinity of circumference and outside of circle having the radius l.sub.1 on the photo-sensitive conversion element 1)              (2)

On the other hand, the light intensity in the semiconductor photo-sensorof the present invention is given by the following formula, where d₂ ≠0.

    A=(an intensity of the light 6)+(sum of intensities of lights reflected by the vicinity of circumference and outside of the circle having a radius l.sub.2 on the photo-electric conversion element 1)       (3)

In the formula (3),

    l.sub.1 =2d.sub.1 tan θ.sub.1

    l.sub.2 =2(d.sub.1 +d.sub.2) tan θ.sub.1

    l.sub.2 -l.sub.1 =2d.sub.2 tan θ.sub.1

    (θ.sub.1 and l.sub.1 are constant)

Accordingly, the larger d₂ is, the larger is the difference l₂ -l₁, thesmaller is the area to which the reflected light is applied and thesmaller is the affect by the reflection. Since the light intensity isinversely proportional to square of light path length, the absolutevalue of intensity of the reflected light in the present invention isreduced because the light path length is long, and hence the affect isreduced. In order to reduce the effect by the reflected light, the areaother than the photo-sensing area of the photo-electric conversionelement 1 is masked to block the light in order to reduce the affect ofthe reflected light from the other than photo-sensing area, and d₂ andthe shape of the light transmitting surface of the sealant are sodesigned that the photo-sensing cells of the photo-electric conversionelement 1 are within the circle having the radius l₂. If the lightimpinges on an area other than the photo-sensing area of thephoto-electric conversion element 1 even with the masking, or if thephoto-sensing cell must be located outside the circle having the radiusl₂, the degree of affect is predicted and d₂ and the shape of the lighttransmitting surface of the sealant are designed to minimize the affect.

The semiconductor photo-sensor of the present invention is effective toa sensor which is highly sensitive to reflection such as line sensor orarea sensor in which the photo-electric conversion element comprises anumber of photo sensing cells such as CCD's.

FIG. 3 shows a sectional view of a second embodiment of thesemiconductor photo-sensor of the present invention. In FIG. 3, the likenumerals to those shown in FIG. 2 designate the like elements.

In the present embodiment, the bulky portion (d₂) is made of glassinstead of light transmitting resin used in FIG. 1.

A semiconductor photo-sensor having a filter made of infrared blockingglass arranged on the light transmitting surface of the lighttransmitting resin has been known. However, such a photo-sensor has adifferent object than that of the present invention and thephoto-electric conversion element thereof has only one photo-sensingcell. Accordingly, the problem addressed by the present invention hasnot been an issue in the prior art photo-sensor.

In FIG. 3, a bonding layer 8 bonds the sealant 4 to the glass 7 and ismade of light transmitting resin. The light transmitting resin used forthe bonding layer may be or may not be same as that of the sealant 4.When they are same, the glass 7 is formed simultaneously when the lighttransmitting resin 4 is formed by the transfer mold method and the glass7 may be bonded and held by the light transmitting resin 4 itself.

The thickness and shape of the glass 7 are determined by the sameconditions as those imposed on the bulky portion of the firstembodiment. In the present embodiment, in addition to the effect of thefirst embodiment, the effect on the optical characteristic is reducedbecause the defect on the surface 9 of the light transmitting resin 4 isfilled by the light transmitting resin 8 having the substantially sameindex of refraction as that of the light transmitting resin 4, or thedefect is not formed on the surface since the glass 7 is bonded and heldby the light transmitting resin 4.

FIG. 4 shows an optical system developed diagram when the semiconductorphoto-sensor of the present invention is used as an AF sensor of acamera. Numerals 23-28 denote parts of a focus detection unit (AFU).Numeral 23 denotes a view field mask arranged near a focus plane,numeral 24 denotes a field lens, numeral 25 denotes a focusing beamsplitting mask having apertures 25a and 25b, numeral 26 denotes asecondary focusing lens and numeral 26a and 26b denotes lens areas.Numeral 27 denotes a focus sensor (semiconductor photo-sensor of thepresent invention) having a pair of line sensors 27a and 27b each havinga number of pixels linearly arranged.

Numerals 28a and 28b denote images of 23a projected by the lens areas26a and 26b of the secondary focusing lens 26. A dimension of theaperture 25a is so designed that the edges of the images 28a and 28b areclosely adjacent to each other. Numeral 24 denotes a lens for directingthe light beam to the focusing light beam splitting mask 25 and thesecondary focusing lens 26.

In the present optical system, the light beam which passed through theimaging lens is focused on 23, passes through the apertures 25a and 25band refocused into 28a and 28b on the line sensors 27a and 27b by thelens areas 26a and 26b, respectively. By detecting a relative positionof two images on the line sensors 27a and 27b, an in-focus state ischecked.

FIG. 5 illustrates a principle thereof. Ea and Eb denote outputs of theimages projected on the line sensors 27a and 27b, respectively. In thein-focus state, a distance S between the two images assumes S₀. If theimaging lens is not in the in-focus state, S≠S₀. In order to detect it,Ea and Eb are relatively bit-shifted to correlate the two images.

If the reflection of the image on 28a affects to the reflection of theimage on 28a, the reflection of the image on 28b affects to thereflection of the image on 28b, the reflection of the image on 28aaffects to the reflection of the image on 28b or the reflection of theimage on 28b affects to the reflection of the image on 28a, then Ea andEb are of different shapes than those of true object brightnessdistribution and the correlation is carrierd out with differentinformation than the true object information. As a result, focusinformation detected includes an error.

The semiconductor photo-sensor of the present invention reduces theeffect of reflection and provides correct focus information.Accordingly, it reverses an existing theory that the "clear mold is notapplicable to the Af sensor."

A manufacturing method for the semiconductor photo-sensor of the presentinvention is now explained.

In FIGS. 6 to 11, the like numerals to those shown in FIGS. 1 to 3designates the like elements.

Referring to FIG. 6, a first embodiment of the manufacturing method ofthe present invention is explained.

(1) The photo-electric conversion element 1 for converting a light to anelectrical signal is fixed by bonding material to a bottom surface ofthe lead frame element mount 2.

(2) The lead frame element mount 2 and the photo-electric conversionelement 1 are electrically connected by fine metal wires 3. By the steps(1) and (2), a major portion of the semiconductor photo-sensor isformed.

(3) The glass 7 is inserted into a recess 19 formed in a cavity of alower mold 16.

(4) The major portion of the semiconductor photo-sensor formed in thesteps (1) and (2) is arranged in the lower mold 16 at a position facingthe glass 7, and an upper mold 15 is closed.

(5) The light transmitting resin 4 is injected from a runner 13 and agate 14 into the upper mold cavity 17 and the lower mold cavity 18.

(6) Heat is applied to the upper mold 15 and the lower mold 16 to realthe main portion of the semiconductor photo-sensor by the injected lighttransmitting resin 4.

(7) The upper mold 15 and the lower mold 16 are removed.

(8) The exposed areas of the lead frame leads 2 are plated.

(9) Unnecessary portions of the lead frame leads are cut away.

(10) External leads are bent.

Through those steps, the semiconductor photo-sensor shown in FIG. 2 iscompleted.

In accordance with the first embodiment of the present invention, thebonding material is not used and the light transmitting resin and theoptical filter are paired. Accordingly, the following advantages areofferred.

(1) The number of steps is reduced.

(2) The light transmitting resin 4 injected into the cavity 18 isstacked on the prearranged optical filter 7. Accordingly, the surface ofthe light transmitting resin which serves as the light path contacts tothe glass 7 and it is not molded by the mold. Accordingly, thedeterioration of the light transmissivity due to the mold releasingagent deposited during molding or the crack created by the transfer isprevented.

(8) Since the glass 7 is arranged in the lower mold 16, no specialposition detector is required and the positioning precision is improved.Vertical, longitudinal and lateral position can be determined freely byappropriately selecting the shape of mold.

(4) Since no bonding layer exists in the light path, the degradation ofthe light transmissivity due to the generation of air bubble in thebonding material is prevented.

(5) Since the light transmitting member such as lens is used, the lighttransmitting resin and the lens can be released at an acute angle evenif an acute area is formed in the light transmitting resin. Accordingly,the cracking when the mold is released is prevented.

FIG. 7 shows a sectional view of a second embodiment of the presentinvention.

In the present embodiment, since a recess 19 is formed in the lower mold16, the glass 7 is positioned by the recess 19 even if the glass 7 issmaller than the light transmitting resin light path surface.Accordingly, the position of the glass 7 in the final product is veryaccurate.

FIG. 8 shows a sectional view of a third embodiment of the presentinvention. In accordance with the present embodiment, silicone grease isapplied to the bottom of the recess 19 and the glass 7 is mountedthereon. Accordingly, the resin does not penetrate into the interfacebetween lower mold 16 and the glass 7.

The sealing method in the present invention may be casting mold,transfer mold or injection mold. Depending on the manufacturingcondition the resin may penerate into the space between the glass 7 andthe recess 19 of the lower type 16. The resin so penerated depositthinnly on the glass 7 and the light transmissivity is impeded by thediffused reflection. The third embodiment shown in FIG. 8 isparticularly effective to prevent the above problem.

FIG. 9 shows a sectional view of a fourth embodiment of the presentinvention.

In the present embodiment, a projection 21 is formed on the bottom ofthe lower mold 16 so that the glass 7 is held by the projection 21.Accordingly, the vertical position of the glass 7 is defined even ifsilicone grease 20 is used.

In the fourth embodiment, since the glass 7 is held by the viscosity ofthe silicone grease 20, the optical filter 7 does not drop even if theglass 7 is mounted on the upper mold 15.

In the third and fourth embodiments, silicone grease is used.Alternatively, other viscous material such as wax such as carnoubarrow,oil such as silicone oil or grease other than silicon grease.

FIGS. 10 and 11 show a fifth embodiment. In the present embodiment, anadhesive tape 22 is applied to one surface (facing the lower mold 16) ofthe glass 7 formed in the step (3) of the first embodiment. Namely, theadhesive tape 22 is arranged in the interface between the glass and thelower mold 12.

The adhesive tape 22 is removed from the glass 7 after the step (7) ofthe first embodiment. Other steps are identical to those of the firstembodiment.

By applying the adhesive tape 22, flakes created by the penetration ofthe resin into the interface between the glass 7 and the lower mold 16are removed when the adhesive tape 22 is peeled off the glass 7.

The adhesive tape should have a heat resistivity (to withstand atemperature of approximately 150° C. applied when the resin is molded orheated) and there is no restriction so long as it has such heatresistivity. The adhesive material of the adhesive tape may be epoxyresin, epoxy phenol resin (which has a heat resistivity of up to 180° C.for continuous heating), vinyl chloride resin, polyimide orpolyamide-imide.

In the present invention, the material of the photo-electricalconversion element, the division of the photo-sensing surface and thecircuit may be selected from various alternatives depending on theapplication and purpose of the semiconductor photo-sensor. Oneapplication is an image pick-up, plane-divided silicon photo-electricconversion element. While the glass and lens are used as the lighttransmitting member on the light transmitting resin in the aboveembodiments, optical filter, polarization plate or concave lens may beused depending on the application and purpose of the semiconductorphoto-sensor.

In the present invention, the light transmitting resin is selected inaccordance with the application and object of the semiconductorphoto-sensor and it should be light transmissive and adhesive as well asresistive to heat and water.

For example, when an operable wavelength range of the semiconductorphoto-sensor is a visible light range of 300 μm to 1000 μm and thematerial of the light transmitting member is glass, the resin ispreferably hardened acid anhydride of bis-phenol type A epoxy resin fromthe standpoints of light transmissivity, adhesivity and reliability.

In accordance with the manufacturing method for the semiconductorphoto-sensor of the present invention, the light transmitting resin isnot affected by the mold or the mold releasing agent, and the resin sealhaving an excellent light transmissivity is attained, and the opticalcharacteristic of the semiconductor photo-sensitive material issignificantly improved. The positioning of the light transmitting memberto the light transmitting resin is facilitated, the total number ofsteps is reduced and the manufacturing cost is reduced. Further, even ifa lens or other non-planar member is used as the light transmittingmaterial, a crack is not created when the mold is released.

We claim:
 1. A semiconductor optical device comprising:a photo-electricconversion unit comprising a plurality of photo-electric conversionelements arranged therein defining a photo-electric conversion area;plural external leads; electrical connection means for electricallyconnecting said photo-electric conversion unit to said plural externalleads; and a sealing member comprising transparent resin for entirelysealing said photo-electric conversion unit and said electricalconnection means, wherein a distance D between a substantially planarouter surface of said sealing member for receiving light incident onsaid photo-electric conversion unit and the photo-electric conversionarea of said photo-electric conversion elements satisfies a relation,D≧(1/2)·l/tan θ, wherein γ is a critical angle of total reflection ofsaid sealing member with respect to air, and l is the maximum length ofthe photo-electric conversion area.
 2. A semiconductor photo-sensoraccording to claim 1 wherein said sealing member further comprises alight transmitting member of different material than said resin.
 3. Asemiconductor photo-sensor according to claim 2, wherein said lighttransmitting member is bonded to said sealing member by a bonding layer.4. A semiconductor photo-sensor according to claim 2, wherein said lighttransmitting member is made of glass.
 5. A semiconductor photo-sensoraccording to claim 1 wherein said photo-electric conversion elements area focusing sensor.
 6. A semiconductor photo-sensor according to claim 3,wherein said light transmitting member is made of glass.
 7. Asemiconductor optical device comprising:a photo-electric conversion unitcomprising a plurality of photo-electric conversion elements arrangedtherein defining a photo-electric conversion area; a plural externalleads; electrical connection means for electrically connecting saidphoto-electric conversion unit to said plural external leads; a sealingmember comprising transparent resin for entirely sealing saidphoto-electric conversion unit and said electrical connection means; anda transparent member comprising a material different from that of saidtransparent resin provided on said sealing member for receiving lightincident on said photo-electric conversion unit, wherein a distance Dbetween a substantially planar outer surface of said transparent memberand the photo-electric conversion area satisfies a relation,D≧(1/2)·l/tan θ and the distance d₁ between an outersurface from which alight is indicant into said transparent resin and said photoelectricconversion area is less than (1/2)·l/tan θ, wherein θ is a criticalangle of total reflection of said transparent and of said transparentmember with respect to air, and l is the maximum length of saidphoto-electric conversion area.
 8. A semiconductor photo-sensoraccording to claim 6, wherein said transparent member is bonded to saidlight sealing member by a bonding layer.
 9. A semiconductor photo-sensoraccording to claim 6, wherein said transparent member is made of glass.10. A semiconductor photo-sensor according to claim 6, wherein saidphoto-electric conversion element is a focusing sensor.
 11. Asemiconductor photo-sensor according to claim 3, wherein said lighttransmitting member is made of glass.
 12. A semiconductor photo-sensorcomprising an array (1) of photo-sensing cells encapsulated in a lighttransmissive resin (4);said array (1) being located at a depth D from abounding surface of said photo-sensor on a light incident side of saidarray (1), characterized in that the depth D is more than l₂ /4 tanθ_(1'), so that the light reflected from the photosensing cell andfurther reflected from a bounding surface of the transmissive resinfalls predominantly outside of the periphery of the photo-sensing array;wherein l₂ is a maximum dimension of a length of said array (1) and theangle θ₁ is the critical angle of total internal reflection for lightinternally reflected from said bounding surface of the transmissiveresin.